Degradation of oxide-passivated boron-diffused silicon
نویسندگان
چکیده
Recombination in oxide-passivated boron-diffused silicon is found to increase severely at room temperature. The degradation reaction leads to a 45 fold increase in emitter recombination that saturates in 120 days, irrespective of whether the samples received a forming-gas anneal. The degradation was also examined for diffusions stored at 50, 75, and 100 °C. The results indicate that the degradation follows a second-order reaction where the time constant of one component of the reaction is 10–40 times shorter than the other, and where the activation energy of the fast reaction is 0.19 0.05 eV. Subsequent to degradation, annealing in air reduces the recombination with increasing anneal temperature saturating at 300 °C to a value that is about four times higher than the predegradation value. A likely cause of this degradation is a reaction of atomic hydrogen at the silicon-oxide-silicon interface. © 2009 American Institute of Physics. DOI: 10.1063/1.3195656
منابع مشابه
Improved silicon surface passivation achieved by negatively charged silicon nitride films
A corona discharge is used to create and store negative charge in the silicon nitride films of silicon dioxide/silicon nitride stacks. Effective lifetime measurements on both textured and planar, as well as both boron diffused and undiffused silicon samples passivated with silicon oxide/silicon nitride stacks, show that the creation of negative charge in the nitride layer results in an improvem...
متن کاملSurface recombination velocity of phosphorus-diffused silicon solar cell emitters passivated with plasma enhanced chemical vapor deposited silicon nitride and thermal silicon oxide
متن کامل
Tunnel oxide passivated rear contact for large area n-type front junction silicon solar cells providing excellent carrier selectivity
Carrier-selective contact with low minority carrier recombination and efficient majority carrier transport is mandatory to eliminate metal-induced recombination for higher energy conversion efficiency for silicon (Si) solar cells. In the present study, the carrier-selective contact consists of an ultra-thin tunnel oxide and a phosphorus-doped polycrystalline Si (poly-Si) thin film formed by pla...
متن کاملA Low Resistance Calcium/Reduced Titania Passivated Contact for High Efficiency Crystalline Silicon Solar Cells
Advances in the efficiency of crystalline silicon (c-Si) photovoltaic (PV) devices above the long-held record efficiency value of 25% have all come from solar cell architectures with passivated contacts fabricated on n-type silicon.[1] The most successful devices to date have a silicon heterojunction (SHJ) cell structure, featuring a thin intrinsic amorphous silicon (a-Si) film that passivates ...
متن کاملAmorphous silicon passivated contacts for diffused junction silicon solar cells
Articles you may be interested in Compositional study of defects in microcrystalline silicon solar cells using spectral decomposition in the scanning transmission electron microscope Appl. Influence of back contact roughness on light trapping and plasmonic losses of randomly textured amorphous silicon thin film solar cells Appl. Photocurrent increase in n-i-p thin film silicon solar cells by gu...
متن کامل